2N6543 features intended for high voltage,fast switching applications with to-3 package absolute maximum ratings tc=25 symbol parameter rating unit v c b o collector to base voltage 850 v v c e o collector to emitter voltage 400 v v e b o emitter to base voltage 9.0 v i c p peak collector current 16 a i c collector current 5.0 a p c collector power dissipation 100 w t j junction temperature 200 t s t g storage temperature -65~200 symbol parameter conditions min max unit i c b o collector-base cut-off current v c b =850v,v b e =0 0.5 ma i e b o emitter-base cut-off current v e b =9v; i c =0 1.0 ma i c e o collector-emitter cut-off current v c b o collector-base breakdown voltage v ( b r ) c e o collector-emitter breakdown voltage i c =100ma,i b =0 400 v v e b o emitter-base breakdown voltage v c e s a t - 1 collector-emitter saturation voltages i c =5a; i b =1a 1.5 v v c e s a t - 2 collector-emitter saturation voltages i c =8a; i b =2a 5.0 v v c e s a t - 3 collector-emitter saturation voltages v c e s a t - 4 collector-emitter saturation voltages h f e - 1 forward current transfer ratio i c =2.5a,v c e =3v 12 60 h f e - 2 forward current transfer ratio i c =5a,v c e =3v 7.0 35 h f e - 3 forward current transfer ratio h f e - 4 forward current transfer ratio v b e ( s a t ) 1 base-emitter saturation voltages i c =5a; i b =1a 1.6 v v b e ( s a t ) 2 base-emitter saturation voltages v b e ( s a t ) 3 base-emitter saturation voltages f t transition frequency at f = 1mhz i c =0.3a,v c e =10v 6.0 24 mhz t f fall time t s tum-off storage time electrical characteristics tc=25 silicon npn transistors to-3 a www.jmnic.com power transistors j m n ic
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